Samsung announces its new memories v

SSD storage technology continues to improve in giant strides and Samsung is at the forefront of innovation, announcing the fifth generation of V-NAND, which will increase the number of layers to 96 with relatively few other design changes. The fifth generation will include Samsung's first QLC NAND flash (four bits per cell), with a capacity of 1TB (128 GB) per die.

96-layer V-NAND memories: More storage, durability and less consumption

Last year, Samsung had announced its fourth generation of 3D NAND, with a 64-layer design. This fourth generation of V-NAND is now in production and will be used in many products in the coming months. Most products will use 256GB or 512GB TLC arrays. Compared to the third-generation 48-layer V-NAND, the 64-layer V-NAND offers the same read performance, but approximately 11% higher write performance.

Power consumption has been improved 'significantly', with the current required for a read operation decreasing by 12% and for a program operation the required power consumption has decreased by 25%. Samsung claims that its 64-layer V-NAND in a TLC configuration can last from 7, 000 to 20, 000 program / erase cycles, so with this new 96-layer memory, units will have a longer lifetime.

Samsung's announced SSDs based on previous V-NAND technologies include a 2.5 ′ 128TB QLC-based SAS SSD. For this unit, Samsung will stack 32 matrices per package, for a total of 4TB on each BGA device.

This is a new step in the near future to begin to retire magnetic storage drives.

Source: anandtech