Samsung begins mass production of its second generation of 10nm dram

There is no doubt that Samsung is one of the best DRAM and NAND memory manufacturers in the world, now the South Korean has taken a new step forward by starting mass production of its second generation of DRAM at 10nm.

Samsung already mass-produces DRAM with its second 10nm generation

Gyoyoung Jin, the president of Samsung has announced that the company has already launched mass production of new DRAM memory chips using the second generation of its 10nm process. This new technology will increase productivity by 30% compared to the previous manufacturing process at 10nm, at the same time, performance will increase by 10% while energy efficiency will increase by 15%.

RAMBUS talks about the characteristics of DDR5 memory

In order to achieve these improvements, EUV technology has not been used, but Samsung's proprietary design techniques have been applied. The company claims that " air spacers " have been used to decrease parasitic capacitation, which has reduced the excessive use of energy needed to increase the performance of memory cells.

Samsung's new second generation 10nm DRAM can operate at 3, 600 Mbps, offering a substantial improvement over the 3, 200 Mbps that current memory offers. Samsung's next generation of DDR4 memory will enable the production of high-speed memory kits with less extreme IC pooling processes, which in turn could drive down the price of high-speed DDR4 memory.

This new technique is not exclusive to DDR4 but will also be used in future DRAM memory standards such as HBM3, DDR5, GDDR6 and LPDDR5. Samsung is already working hard to bring these new types of memory to the market as soon as possible and thus reinforce once again its leadership in the sector.

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