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Researchers from Lancaster University in the UK have been successful in their efforts to create a type of non-volatile flash memory that is as fast as DRAM but uses only 1% of the energy that modern NAND or DRAM memory needs. to write data bits. The memory is called UK III-V Memory.

UK III-V Memory, Non-volatile memory as fast as DRAM consuming 100 times less

The energy use required is approximately 10 to the power of -17 joules for a door built in the 20nm lithographic process. UK III-V memory transistors will have a typically off state, and a gate charge would take around 5ns with emptying taking 3ns, both figures very respectable. These figures are likely to be somewhat higher once a controller is added, but that would be worth compensation for the efficiency gained.

Development is still in the simple transistor stage, so translating this into a full commercial product is still a long way off. However, the achievement of building non-volatile memory that is efficient and fast enough to compete with DRAM is quite an achievement.

Having non-volatile memory as fast as DRAM is interesting because it can be used to build PCs that can keep the data we currently store in RAM when the system is completely powered off and can therefore be resumed in an instant from where it was left from a complete shutdown state. This would eliminate the need for sleep states and also allow systems to shutdown RAM when idle, further reducing power consumption.

Visit our guide on the best RAM memory on the market

The question that comes to mind is whether UK III-V memory can handle the repeated rewrites that DRAM typically undergoes. If wear and tear is a problem, that could crush any dream of a computer with non-volatile RAM.

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