Intel and micron achieve high storage density on nand tlc
Intel is set to give a strong push to the already announced market for home SSDs that is preparing to launch its first 3D NAND memory SSD device in the second half of 2015.
The new devices with 3D NAND are the result of the alliance between Intel and Micron, they have achieved a technology capable of offering 256Gb (32GB) of storage capacity in a single MLC die, an amount that can be increased to 48 GB per die using the TLC flash memory.
Samsung also uses TLC technology but has achieved a storage capacity much lower than that achieved by the alliance between Intel and Micron, the Koreans have only reached capacities of 86 Gb and 128 Gb in MLC and TLC respectively.
The new data storage density achieved by Intel and Micron may lead to very economical SSD devices in the future alongside other devices with enormous storage capacity compared to existing ones today.
Source: dvhardware
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