Kioxia shows a possible successor to nand '' twin bics flash ''

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Kioxia, formerly known as Toshiba Memory, has created a successor to 3D NAND flash memory, which offers a higher storage density compared to QLC's NAND flash.
Kioxia designs Twin BiCS Flash technology, NAND memory density
This new technology, which was announced Thursday, allows memory chips to have smaller cells and more storage per cell, which can significantly increase memory density per cell.
Kioxia announced the world's first “ three-dimensional semicircular split-gate flash memory cell structure” in the world, called Twin BiCS Flash. This is different from the other Kioxia product, BiCS5 Flash. BiCS5 Flash uses circular charge trap cells, while Twin BiCS Flash uses semi-circular floating gate cells. The new structure expands the cell's programming window, although the cells are physically smaller compared to CT technology.
Twin BiCS flash is currently the best option to succeed with QLC's NAND technology, although the future implementation of this chip is still unknown. This new chip significantly increases the storage of flash memory, which has been a big problem for manufacturers, although there are currently three schools of thought on how to fix this.
One of the options is to increase the number of layers. Manufacturers have recently approved 96-layer NAND flash chips and have gotten 128-layer NAND flash chips. Another way to increase the density of NAND flash technology is to reduce the size of the cells, allowing more cells to be placed in a single layer.
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The last way to increase the density of NAND memory is to improve the total bits per cell, which is the most used by manufacturers. This method has allowed us to obtain SLC, MLC, TLC, and the most recent is the QLC NAND, which increases the number of bits per cell by one compared to previous technology.
This newer technology, the Twin BiCS Flash, is still in the research and development phase and is many years away from being implemented. Although BiCS5's 128-layer NAND flash chips are slated to hit the market in 2020, manufacturers, SK Hynix, and Samsung were able to exceed 100 layers in early 2019, with 4D 128-layer NAND chips and V-NAND v6.
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