Intel's mram memory is ready for mass production
Table of contents:
- MRAM promises to replace DRAM and NAND Flash memories
- It can retain information for up to 10 years and resists 200 degrees of temperature
An EETimes report shows Intel's MRAM (Magnetoresistive Random-Access Memory) ready for high-volume manufacturing production. MRAM is a non-volatile memory technology, which means that it can retain information even if there is a loss of power, this more closely resembles a storage device than standard RAM.
MRAM promises to replace DRAM and NAND Flash memories
MRAM memory is being developed to replace in the future DRAM (RAM) memory and NAND flash memory storage.
MRAM promises to be much easier to manufacture and offer superior performance rates. The fact that MRAM has been shown to be able to achieve 1 ns response times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (up to thousands of times faster) compared to NAND flash technology, are the reasons why this type of memory is so important.
It can retain information for up to 10 years and resists 200 degrees of temperature
With current features, MRAM enables data retention of 10 years at 125 degrees Celsius, and a high degree of resistance. In addition to the high resistance, the integrated 22nm MRAM technology has been reported to have a bit rate over 99.9%, an astonishing feat for a relatively new technology.
It is unknown exactly why Intel is using a 22nm process for the manufacture of these memories, but we can intuit that it is not to saturate the production at 14nm, which is the one used by its CPU processors. Nor have they commented on how long we will have to wait until we see this memory in action for the PC market.
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