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Samsung confirms mass production of 10nm ddr4 memory

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Samsung has confirmed the start of mass production of DDR4 DRAM memory with a density of 8 Gibagit and with its advanced second generation 10nm FinFET process, which will offer new levels of energy efficiency and performance.

Samsung talks about its second generation of 10nm DDR4 memory

Samsung's new 10nm and 8Gb DDR4 memory offers 30 percent more productivity than the previous 10n generation, plus it has 10 percent more performance and 15 percent more energy efficiency, all thanks using advanced patented circuit design technology.

The new data detection system enables a more accurate determination of the data stored in each cell, which apparently leads to a considerable increase in the level of circuit integration and manufacturing productivity. This second generation of 10nm memory uses an air spacer around its bit lines to decrease stray capacitance, this facilitates not only a higher level of scaling, but also fast cell operation.

“By developing innovative technologies in the design and process of DRAM circuits, we have overcome what has been a great barrier to the scalability of DRAM. Second generation 10nm class DRAM, we will expand our overall 10nm DRAM production more aggressively, to accommodate strong market demand and continue to strengthen our commercial competitiveness."

“To enable these achievements we have applied new technologies, without the use of an EUV process. The innovation here includes the use of a highly sensitive cell data detection system and a progressive 'air spacers' scheme. ”

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