Micron talks about the break with intel regarding the nand

Micron has spoken of the reason behind the breakup with Intel regarding collaboration in the development of NAND memory. Last January, Intel and Micron announced that their union in the development of NAND memory was coming to an end, and both companies plan to continue to independently evolve their NAND technology.

Micron will bet on Charge-Trap technology to manufacture its NAND chips

The reason behind this breakup was unknown until now, although everything indicated that Intel and Micron wanted to take their NAND technology in separate directions. Micron and Intel use Floating Gate NAND technology, a production technique that they promote as superior to the Charge-Trap model, used by almost all other manufacturers such as Samsung, SK Hynix, Western Digital and Toshiba. Looking ahead to the fourth generation, Micron plans to switch to Charge-Trap, leaving Intel as the sole supporter of Floating Gate technology.

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Until now Micron was skeptical about the longevity of NAND 3D Charg-Trap memory, speculating that data may be lost after six months without power. So Micron did not believe that the NAND developed with Charge-Trap was usable as a long-term non-volatile storage medium. Currently most manufacturers use Charge-Trap with no signs of data loss issues, so Micron has decided to embrace this technology that it has so far rejected.

Despite this breakup, the two companies continue to work together on the development of XPoint memory, with plans to continue developing the technology as a non-volatile storage medium, and as an alternative to DRAM in select applications.

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