Rambus talks about the characteristics of ddr5 memory
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A few days ago we received the first details of the new high-performance stacked memory technology HBM3, now we bring you the details of the new DDR5 that will arrive over the next few years for new generations of processors.
DDR5 will reach 4800 MHz at 1.2V
RAMBUS has released the first characteristics of the future DDR5 memory that is already at a fairly advanced stage of its development, these new memories will arrive with a base frequency of about 4800 MHz, so they will be a good boost compared to current DDR4, We can say that the slowest DDR5 will be as fast as the fastest of the DDR4 approximately.
As the years go by, these new DDR5 will gain in benefits as it happens with all generations, its ceiling could be close to 6400 MHz, which translates into a maximum bandwidth of 51.2 GB / s, double the 25.6 GB / s achieved with current DDR4 technology.
To make all this possible, a strong commitment has been made to improve energy efficiency, DDR5 will be able to reach 4800 MHz with a voltage of only 1.2V, an important improvement compared to the 1.5V that the current DDR4 needs to achieve the 4600 MHz. Finally we highlight that the maximum capacity of each module will rise to 128 GB so we can see configurations of 512 GB using only four modules.
The first DDR5 memories will arrive throughout 2019 with a manufacturing process at 10 nm, and then migrate to the most efficient 7 nm.
Rambus works with microsoft to improve memory performance at cryogenic temperatures
DRAM memories operate with increased performance and capacity at cryogenic temperatures. They can be used in quantum computers or super computers.
Amd talks about improved memory support, ryzen 3 and game optimization
AMD has talked about Ryzen processors and all the improvements that will come for its new platform based on the Zen architecture.
Sk hynix already has 16gb 5200mhz ddr5 memory chips
SK Hynix has managed to reduce DDR5 memory voltage to 1.1V, and achieve 30% lower power consumption than DDR4.
