Samsung announces 3nm mbcfet process, 5nm will arrive in 2020
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In the mobile SoC market, TSMC is moving fast when it comes to introducing new manufacturing process nodes. Today, Korean tech giant Samsung has announced plans for a variety of process nodes. These include 5nm FinFET and a 3nm GAAFET variation that Samsung has registered as MBCFET (Multi-Bridge-Channel-FET).
Samsung announces 3nm MBCFET process
Today, at the Samsung Foundry Forum in Santa Clara, the company has announced plans for its next-generation semiconductor manufacturing process. The big announcement is for the development of Samsung's 3nm GAA, dubbed 3GAE by the company. Samsung has confirmed that it released design kits for the node last month.
Samsung collaborated with IBM for the GAAFET (Gate-All-Around) process nodes, but today the company has announced its adaptations to the previous process. This is called MBCFET and, according to the company, it allows a higher current per battery by replacing the Gate All Around nanowire with a nanoscale. The replacement increases the driving area and allows the addition of more doors without increasing the lateral footprint. Very technical data, but with a result that should greatly improve the development of FinFET.
Product design for Samsung's 5nm FinFET process, which was developed in April, is expected to be completed in the second half of this year and put into mass production in the first half of 2020.
In the second half of this year, Samsung plans to start mass production of 6nm process devices and complete development of the 4nm process. Product design for Samsung's 5nm FinFET process, which was developed in April, is expected to be completed in the second half of this year and put into mass production in the first half of 2020.
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