Samsung begins production of its new emram memories
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Samsung Electronics today announced that it has started serial production of its new eMRAM memories using a 28-nanometer manufacturing process (FD-SOI).
Samsung's eMRAM memories promise to revolutionize the industry
MRAM memory has been in development for many years and it is non-volatile magnetic RAM, which means that it does not lose data when it has no power, as it does with normal RAM today.
Samsung's 28FDS-based eMRAM solution offers unprecedented power and speed benefits at a lower cost. Since eMRAM does not require a clear cycle before writing data, its writing speed is approximately a thousand times faster than eFlash. Additionally, eMRAM uses lower voltages than Flash memories, and does not consume electrical power when in off mode, resulting in high energy efficiency.
The advantages over the memories that are used nowadays like RAM and Flash memories are revolutionary, with latencies of 1ns, higher speed and greater resistance. The eMRAM memories were designed to replace the current RAM and Flash NAND memories, although for that we will have to wait a bit.
It is said that the first modules created by Samsung will have a very limited capacity. The Korean company did not want to give too much detail about the modules they are manufacturing, but the intention is to start testing a 1GB module before the end of 2019. Later, Samsung also plans to make eMRAM using its 18FDS process, as well as nodes based on more advanced FinFETs.
This may be the birth of a new era when it comes to computer storage. We will be following its evolution.
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