Samsung talks about its technology v
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Recently, the Samsung SSD Forum event was held in Japan, in which the South Korean company revealed the first details about its next 96-layer V-NAND memory units based on QLC technology.
Samsung gives the first details of its 96-layer V-NAND QLC memory
Using V-NAND QLC memory over V-NAND TLC offers a 33% higher storage density and therefore a lower cost of storage per GB, which is very important if you want SSDs to completely replace mechanical hard drives someday. The first Samsung SSDs to adopt its V-NAND QLC memory will be high-capacity models for those customers who need to store a large amount of data, and who may not be interested in maximum performance, as the first this type will be behind those based on TLC in benefits.
We recommend reading our post on the best SSDs of the moment SATA, M.2 NVMe and PCIe
Samsung has been openly working on ultra-high capacity U.2 SSD drives based on V-NAND QLC memory for over a year. These drives will be used for WORM (write once, read many) applications that are not optimized for fast writes, but clearly outperform HDD-based arrays. Samsung expects its first NVMe drives with QLC to offer sequential read speeds of up to 2, 500 MB / s, as well as up to 160K of random read IOPS.
Another line of Samsung products based on V-NAND QLC technology will be consumer SSDs with capacities greater than 1TB. These drives will use a SATA interface and will offer sequential read and write throughput of around 520 MB / s. Samsung does not expect QLC V-NAND to replace TLC V-NAND as the primary type of flash memory any time soon. The NAND QLC requires more expensive controllers, with considerably higher processing capabilities, to ensure adequate resistance.
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