Samsung introduces new high-bandwidth hbm2e memory
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Samsung just unveiled its new high-bandwidth memory HBM2E (Flashbolt) at NVIDIA's GTC 2019 event. The new memory is designed to provide maximum DRAM performance for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).
HBM2E offers 33% more speed than the previous generation HBM2
The new solution called Flashbolt, is the first HBM2E memory in the sector to offer a data transfer rate of 3.2 gigabits per second (Gbps) per pin, this represents 33% more speed than the previous generation of HBM2. Flashbolt has a density of 16Gb per matrix, double the capacity of the previous generation. With these enhancements, a single Samsung HBM2E package will offer a bandwidth of 410 gigabytes per second (GBps) and 16 GB of memory.
Visit our guide on the best RAM memories
This represents a breakthrough, which can further improve the performance of those graphics cards that use it. It is unknown whether the new generation AMD Navi used this type of memory, or if they bet on GDDR6 memory. Recall that Radeon VII, AMD's latest graphics card, uses 16GB of HBM2 memory.
"Flashbolt's industry-leading performance will enable improved solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications, " said Jinman Han, senior vice president of memory product planning and application engineering team at Samsung. "We will continue to expand our 'premium' DRAM offering and upgrade our high-performance, high-capacity, low-power memory segment 'to meet market demand . "
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