Samsung already mass-produces the second generation of 10 nanometer lpddr4x memory

Samsung Electronics, the world leader in high-performance memory technology for all types of electronic devices, today announced that it has begun mass manufacturing the second generation of 10 nanometer LPDDR4X memory.

Samsung offers details of its second generation 10 nanometer LPDDR4X memories

These new 10-nanometer LPDDR4X memory chips from Samsung will improve energy efficiency and reduce battery consumption of premium smartphones and other current mobile applications. Samsung claims the new chips offer up to a 10% power reduction and maintain the same 4.266 Mb / s data rate as first-generation chips at 10nm. All this will allow significantly improved solutions for the next generation flagship mobile devices that should hit the market later this year or in the first part of 2019.

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Samsung will expand its production line of premium DRAM memory by more than 70 percent to meet the current high demand, which is expected to increase. This initiative started with the mass production of the first 8GB and 10nm DDR4 DRM server last November and continues with this 16Gb LPDDR4X mobile memory chip just eight months later.

Samsung has created an 8GB LPDDR4X DRAM package by combining four of the 10nm DRD LPDDR4X 16Gb chips. This four-channel package can realize a data rate of 34.1 GB per second and its thickness has been reduced by more than 20% since the first generation package, allowing OEMs to design thinner and more effective mobile devices.

With its advances in LPDDR4X memory, Samsung will rapidly expand its market share of mobile DRAM by providing a variety of high-capacity products.

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