Sk hynix announces its new 8gb ran ddr4 memory made in 1ynm
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Memory giant SK Hynix has announced the development of its 8Gb 1Ynm DDR4 DRAM memory, which means it can be manufactured using 14nm and 16nm lithography. The new chip offers a 20% improvement in productivity compared to its previous generation 1Xnm counterpart and also a more than 15% improvement in power consumption.
New SK Hynix 1Ynm 8Gb DDR4 RAM
The new SK Hynix 8Gb 1Ynm DDR4 DRAM supports a data transfer rate of up to 3, 200 Mbps, which the company says is the fastest data processing speed on the DDR4 interface. SK Hynix has adopted a '4-phase timing' scheme, which duplicates the clock signal to increase the speed and stability of data transfer.
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SK Hynix also introduced its in-house developed " Sense Amp Control " technology to reduce power consumption and data errors. With this technology, the company was able to improve the performance of the sensory amplifier. SK Hynix improved the structure of the transistor to reduce the possibility of data errors, a challenge that accompanies the reduction in technology. The company also added a low-power power supply to the circuit to avoid unnecessary energy consumption.
This 1Gn and 8Gb DDR4 DRAM has optimal performance and density for the company's customers, in the words of SK Hynix Vice President Sean Kim. SK Hynix plans to start shipping from the first quarter of next year to actively respond to market demand. SK Hynix plans to offer its 1Ynm technology process for servers and PCs, and then to other applications such as mobile devices.
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