Toshiba develops the first 4-bit nand qlc memory per cell

Toshiba, one of the world leaders in NAND memory manufacturing, today announced its new NAND QLC memory technology with higher storage density than offered by TLC for a new generation of high-capacity devices at reasonable prices.

Toshiba already has the world's first NAND QLC memory

Toshiba's new BiCS FLASH 3D memory builds on QLC technology to become the world's first 3D memory capable of storing a total of 4 bits per cell. These new chips offer a capacity of 768 gigabit, which is significantly higher than the 512 gigabit that is achieved with current TLC memories.

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Toshiba's new QLC BiCS FLASH memory is built in a 64-layer design to achieve a capacity per die of 768 gigabit, which is equivalent to 96 gigabytes and allows devices with no less than 1.5 TB of capacity to be offered with use from a stack of 16 dies in a single package. With this Toshiba becomes the leading company in flash storage density.

Shipments of the first samples of Toshiba's new QLC memory will begin this June so that SSD manufacturers and their controllers can get started as soon as possible. The first samples will also be shown at the Flash Memory Summit event that will take place between August 7-10 in Santa Clara.

We will see if the arrival of QLC memories is accompanied by a significant new drop in the prices of SSDs, which for months have not stopped rising given the high demand for NAND memory chips by smartphone manufacturers.

Source: techpowerup