Toshiba stands up to optane with its xl technology

Toshiba announced at the Flash Memory Summit that it is developing 3D XL-Flash technology, with a focus on creating low-latency 3D NAND memory that can compete with emerging Optane and 3D XPoint memory technologies. Toshiba says the new approach to low-latency NAND memory could reduce latency values ​​to just 1/10 of the current consumer NAND TLC price.

XL-Flash technology promises to improve 3D-NAND memory latency

An updated NAND architecture with XL-Flash could be an equivalent to what Samsung is doing with its Z-NAND technology, which could lower production costs compared to Optane. Toshiba will use its BiCS flash technology, but XL-Flash will be deployed, at least initially, in SLC deployments, in order to improve performance (7 microseconds of response time versus 30 microseconds of QLC). Of course, this will reduce storage density, but let's remember that the goal is to offer Optane-like performance and equal or better density at a lower price.

Steps Toshiba has taken to increase performance include shortening bit lines and word lines, internal connections between cells, or shorter paths between cells means lower latency and better performance. Additionally, parallelism and performance have been increased by adding more flash planes, independent regions that can respond to data requests simultaneously.

The XL-Flash is expected to be used as cache memory in high-density QLC drives, as well as standalone products seeking to dethrone what is offered by Intel's Optane memory.

Toshiba seems ambitious with the XL-Flash initiative, and it has to be one of the largest memory manufacturers in the world.

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