Hynix Releases First 96-Layer 512GB Nand CTF 4d Flash Memory
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SK Hynix today released the world's first 96-layer 512Gb 96-layer 4D NAND flash (Charge Trap Flash). This new type of flash memory is still based on 3D TLC technology, but SK Hynix has added a fourth dimension due to its combination of charge trap flash technology in conjunction with 'PUC' (Peri. Under Cell technology).
SK Hynix introduced its new 96-layer 4D NAND memories
SK Hynix says its focus is (obviously) better than the commonly used 3D floating door approach. The 4D NAND chip design results in a more than 30% reduction in chip size and increases bit-per-wafer productivity by 49% compared to the company's 72-layer 512 Gb 3D NAND. Additionally, the product has 30% more write speed and 25% more data read performance.
Data bandwidth has also doubled to become the industry leader (in size) at 64 KB. The data I / O rate (input / output) reaches 1, 200 Mbps (megabits / sec) with a voltage of 1.2 V.
The first 1TB drives would arrive in 2019
The plan is to introduce consumer drives with capacities up to 1TB together with SK Hynix drivers and firmware. The company plans to use 1 Tb TLC and QLC 96-layer memory chips in 2019.
This is the future of solid state drives, with improvements on all fronts, increased capabilities, and read and write speeds.
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