Samsung to abandon finfet technology at 3nm, slated for 2022

During the Samsung Foundry Forum 2018 event, the South Korean giant revealed a series of new improvements in its process technology aimed at high-performance computing and connected devices. The company will abandon FinFET technology at 3nm.

Samsung will replace the FinFET with a new transistor with the 3 nm, all the details

Samsu ng's new roadmap focuses on providing its customers with more energy-efficient systems for devices targeting a wide variety of industries. Charlie Bae, executive vice president and director of sales and marketing for the foundry, says, "The trend toward a smarter, more connected world is making the industry more demanding of silicon suppliers."

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Samsung's next process technology is Low Power Plus 7nm based on EUV lithography, which will enter the mass production phase during the second half of this year and will expand during the first half of 2019. The next step will be the Low process. Power Early 5nm that will improve the energy efficiency of 7nm to a new level. These processes will still be based on FinFET technology, as will the next one at 4nm.

The FinFET technology will be abandoned with the move to the 3nm Gate-All-Around Early / Plus process, which will be based on a newer type of transistor that allows solving the physical scaling problems present with FinFET. There are still quite a few years to go until this manufacturing process arrives at 7 nm, the first estimates point to the year 2022, although the most normal thing is that there are some delays involved.

We are getting closer to the silicon limit, estimated at 1nm, making it harder to move forward with new manufacturing processes, and the gaps are getting smaller.

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