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Samsung announces the first 8 gp lpddr5 memory manufactured at 10 nm

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Samsung today announced that it has successfully developed the industry's first 10-nanometer LPDDR5 DRAM with 8 gigabit capacity. This is an achievement that has been made possible by four years of work since the introduction of the first 8Gb LPDDR4 chip in 2014.

Samsung already has an 8 Gb LPDDR5 memory manufactured at 10 nm

Samsung is already working at full speed, to start mass production of its LPDDR5 memory technology as soon as possible, for use in the next mobile applications with 5G and Artificial Intelligence. This 8Gb LPDDR5 chip boasts a data transfer rate of up to 6, 400 MB / s, making it 1.5 times faster than current 4266 Mb / s LPDDR4X chips. This high speed will allow you to send 51.2 GB of data or 14 full-HD video files of 3.7 GB each in just one second.

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The 10nm LPDDR5 DRAM will be available in two bandwidths: 6, 400 Mb / s with an operating voltage of 1.1v and 5, 500 Mb / s at 1.05 V, making it the most versatile mobile memory solution for smartphones and automotive systems. Next Generation. This performance advance has been made possible through various architectural improvements, such as doubling the number of memory banks from eight to 16, to achieve much higher speed while reducing power consumption. The new LPDDR5 chip also makes use of a highly advanced, speed-optimized circuit architecture that verifies and guarantees performance.

Thanks to its low consumption characteristics, the DRAM LPDDR5 memory will offer reductions in energy consumption of up to 30%, maximizing the performance of mobile devices and extending the battery life of the devices.

Samsung plans to begin mass production of its next-generation DRD lineups LPDDR5, DDR5, and GDDR6 in line with the demands of global customers, leveraging state-of-the-art manufacturing infrastructure on its latest line in Pyeongtaek, Korea.

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