Samsung develops the first third-generation 10nm dram

Samsung announced today that it has developed for the first time in the industry a third generation DDR4 double-rate 8 gigabit (Gb) 10-nanometer (1z-nm) DRAM.

Samsung is a pioneer in manufacturing DRAM memories

Just 16 months since the second generation of the 10nm (1y-nm) 8Gb DDR4 class began mass-producing, the development of 1z-nm 8Gb DDR4 without the use of Extreme Ultraviolet (EUV) processing has pushed the limits even further. of the DRAM scale.

As 1z-nm becomes the smallest memory processing node in the industry, Samsung is poised to respond to growing market demands with its new DDR4 DRAM that has over 20% higher manufacturing productivity compared to the previous version of 1y-nm. Mass production of the 1z-nm and 8Gb DDR4 will begin in the second half of this year to accommodate the next generation of high-end business servers and PCs that are expected to be released in 2020.

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The development of Samsung's 1z-nm DRAM paves the way for the next generation of DDR5, LPDDR5 and GDDR6 memory as well, which are the future of the industry. Higher capacity and performance 1z-nm products will allow Samsung to strengthen its competitiveness and consolidate its leadership in the 'premium' DRAM memory market for applications including servers, graphics and mobile devices.

Samsung took the opportunity to say that it would increase part of its main memory production at the Pyeongtaek plant in Korea to meet the growing demand for DRAM.

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