Samsung plans to mass-produce 3nm gaafet chips in 2021
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In the middle of last year, news emerged that Samsung was planning to produce 3nm chips in 2022, but it looks like that is going to be a year early, with the arrival of a new transistor technology called GAAFET.
Samsung to start producing 3nm GAAFET chips in 2021
Samsung has confirmed that it plans to start serial production of the 3nm Gate-All-Around Field-Effect Transistors (GAAFETs) in 2021, using a type of transistor that is designed to succeed today's well-known FinFETs.
The GAAFET name describes everything you need to know about technology. Overcome FinFET's performance and scale limitations by offering four gates around all sides of a channel to offer full coverage. In comparison, FinFET covers three sides of a fan-shaped channel. Indeed, GAAFET takes the idea of a three-dimensional transistor to the next level.
The new technology will also allow it to operate at lower voltages than now, although they have not detailed exactly how this improvement in energy performance will translate.
Samsung has been developing its GAAFET technology for several years, and the company's previous estimates place the launch of the 4nm GAAFET technology as early as 2020. Samsung also expects it to be the first company to launch a 7nm EUV process node., with plans to start production later this year. Its competitor TSMC also plans to implement the EUV technology with its 7nm + node.
If Samsung's estimates are correct, the company has a chance of becoming the world's leading silicon maker for years to come, although that doesn't mean TSMC can't fight.
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